GaAlAs/GaAs量子阱结构的光致发光研究

PHOTOLUMINESCENCE OF GaAlAs/GaAs QUANTUM WELLS STRUCTURE

阐述了用ＭＯＣＶＤ 生长的ＧａＡｌＡｓ／ＧａＡｓ 梯度折射率分别限制量子阱结构及其光学性质． 样品经高分辨率光致发光（ＰＬ）测试显示， 在１０Ｋ 下对于８ｎｍ 的单量子阱， 通过激发产生的荧光光谱半峰宽（ＦＷＨＭ）为６．２ｎｍ ， 同时具有较高的强度． 表明量子阱结构具有陡峭的界面； 另外还观察到， Ｘ（ｅ－ｈｈ）峰值位置相对于激发能级的移动． 测试结果表明， 样品质量符合设计要求， 结果令人满意．

In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties. The samlpe were characterized by high resolution photoluminescence measurements. For 8nm single quantum well, the photo luminescence spectra at 10K were measured which have a linewidth(FWHM) of 6 2nm and large intensity, indicating an abrupt GaAlAs/GaAs interface. The shift of X(e hh) peak position versus the excitation level are also observed. The results of PL measurement show that sample quality has met the requirment of design and proven to be satisfactory.