规则织构化硅片表面的制备及其润湿行为

Fabrication and Wetting Behaviors of Regular Textured Silicon Surfaces

采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。主要以三种典型的规则织构包括圆柱状、圆坑状和沟槽状表面为研究对象,系统考察了织构形状和几何参数对表面润湿行为的影响规律。研究结果表明:随着织构高度、深度和表面覆盖率的增加,规则织构化硅片表面疏水性能增强,规则织构化表面疏水性能随着表面粗糙度的增加而增强。不同的几何形貌对硅片表面接触角的影响强度是不同的,相对于柱状与沟槽状织构,坑状织构在较小的表面粗糙度时可得到较大的接触角。当表面的接触角均为101°时,坑状、柱状、沟槽状织构的表面粗糙度分别为16.2 nm,29.2 nm和70.2 nm。

Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma（ICP） etching technology.With focus on the three kinds of typical textured silicon surfaces including pillar,dimple and groove in this study,influences of texture shape and geometrical parameters on the wetting behaviors of textured surfaces were systematically evaluated.The results show that wetting behaviors of textured silicon surfaces were closely related to the texture shapes and geometrical parameters.With the increasing of surface roughness,regular textured surfaces became more hydrophobic.Silicon wafers with different geometric morphology had different influences on their surface contact angles.Compared with pillar and groove pattern,silicon surface with dimple pattern exhibited larger contact angle value even with a lower surface roughness.In order to get the same contact angle of 101°,the roughness of silicon surfaces with dimple,pillar and groove patterns were 16.2 nm,29.2 nm and 70.2 nm,respectively.