摘要
Three types of a-C:Co/Si samples were fabricated using the pulsed laser deposition: Co2-C98/8i with Co dispersed in the a-C film, Co2-C98/Si with Co segregated at the interface, and a-C/Co/Si with Co continuously distributed at the a-C/Si interface. Both types of Co2-C98/Si samples had the positive bias-voltage-dependent magnetoresistance (MR) at 300 K, and all MRs had saturated behavior. The study on the electrotransport properties indicated that the MR appeared in the diffusion current region, and the mechanism of MR was proposed to be that the applied magnetic field and local random magnetic field caused by the superparamagnetic Co particles modulate the ratio of singlet and triplet spin states, resulting in the MR effect. In addition, the very different physical and structural properties of all samples revealed that Co played a crucial role in the room-temperature positive MR of a-C:Co/Si system.
Three types of a-C:Co/Si samples were fabricated using the pulsed laser deposition:Co2-C98/Si with Co dispersed in the a-C film,Co2-C98/Si with Co segregated at the interface,and a-C/Co/Si with Co continuously distributed at the a-C/Si interface.Both types of Co2-C98/Si samples had the positive bias-voltage-dependent magnetoresistance(MR) at 300 K,and all MRs had saturated behavior.The study on the electrotransport properties indicated that the MR appeared in the diffusion current region,and the mechanism of MR was proposed to be that the applied magnetic field and local random magnetic field caused by the superparamagnetic Co particles modulate the ratio of singlet and triplet spin states,resulting in the MR effect.In addition,the very different physical and structural properties of all samples revealed that Co played a crucial role in the room-temperature positive MR of a-C:Co/Si system.
基金
support given by the National Natural Science Foundation of China (Grant Nos. U0734001 and 50772054)
the Ministry of Science and Technology of China (Grant Nos. 2008CB617601 and 2009CB929202)
