BF_2^+注入加固硅栅PMOSFET的研究

EFFECT OF BF\++\-2 IMPLANTED IN HARDENED Si\|GATE PMOSFET 

系统地研究了ＢＦ＋２ 注入硅栅Ｐｃｈａｎｎｅｌ ｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒ ｆｉｅｌｄｅｆｆｅｃｔ ｔｒａｎｓｉｓｔｏｒ（ＰＭＯＳＦＥＴ） 阈值电压漂移与γ辐照总剂量之间的关系，深入地探讨了ＢＦ＋２ 注入抗γ辐射加固的机理．结果表明，ＢＦ＋２ 注入对硅栅Ｐｃｈａｎｎｅｌ ｍｅｔａｌｏｘｉｄｅｓｅｍｉｃｏｎｄｕｃｔｏｒ（ＰＭＯＳ） 在γ辐照下引起的阈值电压漂移具有很强的抑制作用，ＢＦ＋２ 注入加固硅栅ＰＭＯＳ 的最佳注入剂量范围为５ ×１０１４ —２ ×１０１５ ｃｍ － ２ ，分布在ＳｉＯ２／Ｓｉ 界面的Ｆ 原子抑制了γ辐照下在ＳｉＯ２／Ｓｉ 界面产生的氧化物陷阱电荷和界面陷阱电荷可能是ＢＦ＋２ 注入加固硅栅ＰＭＯＳＦＥＴ

The relation between the threshold voltage shift of BF\++\-2 implanted Si\|gate PMOSFET and the total γ irradiation dose has been systematically studied,and the mechanism of γ irradiation hardening for BF\++\-2 implantation has also been analyzed in detail.The studies show that BF\++\-2 implantation has a strong suppression for the threshold voltage shift of BF\++\-2 implanted Si\|gate PMOSFET under γ irradiation;optimum BF\++\-2 implantation dose in the hardened Si\|Gate PMOSFET ranges from 5×10 14 —2×10 15 ?cm -2 ;F atoms distributed at SiO\-2/Si interface,which suppress the oxide\|trap charges and interface\|trap charges produced under γ irradiation,may be the main origin of BF\++\-2\|implanted and hardened Si\|gate PMOSFET.