摘要
对碲化铅（ＰｂＴｅ） 在室温下进行了Ｓｎ 离子注入（２００ ｋｅＶ，６ ×１０１６ 和１ ×１０１７ ｉｏｎ／ｃｍ ２） ．应用电学和热学测量、Ｘ 射线衍射技术（ＸＲＤ） 和Ｘ 射线光电子能谱（ＸＰＳ） 研究了Ｓｎ 离子注入ＰｂＴｅ
In this paper, it is reported that the Sn ions (200?keV, 6×10\+\{16\} and 1×10 17 ion/cm 2) were implanted at room temperature into specimens of lead telluride. By making use of electric and thermal measurements, X\|ray diffraction and X\|ray photoelectron spectroscopy, we have studied the effects of implantation on the thermoelectric properties and the structure of implanted layer of lead telluride.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第12期2334-2342,共9页
Acta Physica Sinica
基金
国家自然科学基金
