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与Ag内电极共烧对ZnVSb压敏陶瓷显微结构及性能的影响 被引量:1

Effects of Co-firing with Ag Inner-electrode on Microstructure and Properties of ZnVSb Varistor Ceramics
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摘要 研究共烧影响及其机理是开发多层片式压敏电阻的基础和关键。采用XRD、SEM、EDS研究了与Ag内电极共烧对ZnVSb陶瓷显微形貌、晶体结构及烧结性能的影响。结果表明,与Ag内电极共烧不影响ZnVSb陶瓷的相组成,但阻碍ZnVSb陶瓷烧结。Ag通过富V液相扩散并恶化其与ZnO晶粒的浸润性,从而阻碍ZnVSb陶瓷的致密化进程。Zn在Ag内电极中不存在扩散,而Sb在其中的扩散破坏了ZnVSb陶瓷原有的成分配比。研究结果为ZnVSb基片式压敏电阻开发奠定了基础。 Effects of co-firing on the performance of varistor ceramics and its mechanism is one of key factors for multilayer chip varistors.The effects of co-firing with pure Ag electrode on the phase constituent and microstructure of ZnVSb varistor ceramics were studied by means of X-ray diffractometry(XRD),scanning electron microscopy(SEM) and X-ray energy-dispersive spectroscopy(EDS).The results show that co-firing with Ag inner electrode has no observed effect on the phase constituents of ZnVSb based varistor ceramics.During the sintering process,Ag diffuses through the V rich phase,and then deteriorates the wetting of vanadium rich phase on ZnO grains.Consequently,the densification of ZnVSb ceramics is inhibited.In contrast to Sb,Zn has no diffusion within Ag inner electrode.The diffusion of Sb changes the original optimized composition of ZnVSb varistor ceramics.The results provide the foundation for the future development of ZnVSb based chip varistors.
作者 赵鸣 田长生
出处 《材料科学与工程学报》 CAS CSCD 北大核心 2011年第3期337-340,354,共5页 Journal of Materials Science and Engineering
基金 内蒙古自然科学基金资助项目(20080404MS0804)
关键词 ZnVSb压敏陶瓷 Ag内电极 共烧 ZnVSb varistor ceramics Ag inner-electrode co-firing
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  • 1成鹏飞,李盛涛.ZnO-Bi_2O_3系MLCV内电极扩散现象的研究[J].电子元件与材料,2005,24(8):43-45. 被引量:2
  • 2钟明峰,苏达根,庄严.多层片式ZnO压敏电阻器内电极材料研究[J].电子元件与材料,2005,24(11):8-9. 被引量:4
  • 3王兰义,吕呈祥,景志刚,杜辉,唐国翌.多层片式压敏电阻器的应用[J].传感器与微系统,2006,25(5):1-4. 被引量:6
  • 4吕呈祥,主兰义,景志刚,等.纳米材料制器的多层片式ZnO压敏电阻器及其制造方法[P].中国专利:2005100176584.2005—06.03.
  • 5Ji M H, Choi C H, Jang B K, et al. Study on electrostatic discharge (ESD)reliability improvement of ZnO-based multilayered chip varistor (MLV) [J].Microelectron Reliab, 2004, 44(9-11): 1565- 1569.
  • 6Kim C H, Kim J H. Voltage transient response of a ZnO based multilayered chip varistor doped with alum AIK(SO4)2·12H2O [J]. Key Eng Mater, 2002, 228-229: 179-84.
  • 7Kim C H, Kim J H. Effect of firing temperature on microstructure and the electrical properties of a ZnO-based multilayered chip type varistors (MLV)[J]. J Korean Ceram Soc, 2002, 39(3): 286-293.
  • 8Wu C L,Varistor and fabricating method of zinc phosphate insulation for the same [P]. US-20030150741A1, 2003-08-14.
  • 9Jeong J H, Lee S C, Choi H. Method for fabricating a chip-type varistor having a glass coating layer [P]. US-6604276B2, 2003 08-12.
  • 10Shiraishi K, Inoue T, Sasaki R, et al. Zinc oxide varistor and method of manufacturing same [P].US-6749891B2, 2004-06-15.

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