SmCo薄膜磁控溅射沉积速率的影响因素

Influence of Technique Parameters on Depositing Rate of SmCo Films Prepared by Magnetron Sputtering

SmCo薄膜的厚度是影响其磁性能的重要因素,而沉积速率是控制薄膜厚度的关键。采用直流磁控溅射工艺制备SmCo薄膜,设计正交实验并通过数理统计方法研究了溅射工艺参数中溅射功率、靶基距及氩气压强对SmCo薄膜沉积速率的影响,并同时考察了不同厚度SmCo薄膜的磁性能变化规律。研究结果表明：溅射功率与靶基距都对薄膜的沉积速率有较大的影响,其中在溅射功率为40~120W范围内时,随着溅射功率的增大SmCo薄膜的沉积速率逐渐提高;在靶基距为50~70mm的范围内,SmCo薄膜的沉积速率随靶基距的增大而逐渐降低;而在氩气压强处于0.7~1.5Pa范围内时,SmCo薄膜的沉积速率几乎不随氩气压强的改变而变化。在溅射功率为80W、靶基距为60mm及氩气压强为1.1Pa的工艺条件下,SmCo薄膜的沉积速率具有很好的稳定性。随膜厚从0.59μm增加到0.90μm,SmCo薄膜的矫顽力由23.4kA/m降低到8.2kA/m。

Thickness has been found to be an important factor that influences magnetic properties of SmCo thin films,and depositing rate is the key factor to determine the film thickness.By means of orthogonal experiments,SmCo thin films were prepared by DC magnetron sputtering.Influence of technique parameters on depositing rate of SmCo films was investigated by mathematical statistics method.And dependence of magnetic property on SmCo film thickness was also presented.Results show that the sputtering power and the target-substrate distance have significant influence on the depositing rate.With increasing the sputtering power in the range of 40~120W,depositing rate of SmCo thin film rises accordingly.Within the range of 50~70mm,the increase of target-substrate distance leads to the decrease of depositing rate of SmCo thin film.However,in the range of 0.7~1.5Pa,Ar pressure works little on the depositing rate.Under the conditions of sputtering power 80W,target-substrate distance 60mm and Ar pressure 1.1Pa,depositing rate of SmCo film exhibits a good uniformity.Coercivity of SmCo thin film decreases from 23.4 kA/m to 8.2kA/m with increasing the film thickness from 0.59μm to 0.90μm.