磁控溅射功率对掺Al氧化锌薄膜特性的影响

Effect of sputtering power on the properties of Al-doped ZnO films by RF magnetron sputtering

利用射频磁控溅射技术在石英玻璃衬底上制备掺Al氧化锌(AZO)薄膜,研究了不同溅射功率(75,120,160,200 W)对AZO薄膜的结构、光学和电学特性的影响。结果表明:所制备的AZO薄膜具有良好的c轴择优取向,且随着溅射功率的增加,薄膜的表面颗粒尺寸逐渐增加;薄膜在可见光范围具有较高的透射率,吸收边在350～400 nm波段;随着溅射功率的增加,载流子浓度和迁移率逐渐增大,电阻率逐渐下降。

The Al-doped ZnO（AZO） films are deposited on glass using RF magnetron sputtering technology under different sputtering power：75,120,160,200 W.The effect of sputtering power on the structural,optical and electrical properties of the AZO films is investigated.The results indicate each of the films has a preferential c-axis orientation and the surface grain size increases with sputtering power increasing.All the films exhibit a high transmittance in visible region and have sharp fundamental absorption edge in the wavelength range of 350~400 nm.The resistivity decreases as sputtering power increases,both carrier concentration and Hall mobility increase.