Cu(In,Ga)Se_2薄膜的制备及其表征(英文)

Fabrication and characterization of Cu(In,Ga)Se_2 thin films

CuIn1-xGaxSe2(CIGS)为直接带隙半导体,其带隙宽度随In/Ga比而变化,且对可见光具有很高的吸收系数,是最有希望用于制作新一代高效、低成本薄膜太阳能电池的材料.采用直流溅射和后硒化工艺制备了系列CIGS薄膜,研究了溅射功率和衬底对CIGS薄膜的微结构和光学性质的影响.发现钼玻璃上溅射功率为50W,在550℃硒化40min的条件下获得的CIGS薄膜具有单一的黄铜矿结构、均匀致密的表面形貌和柱状晶粒.所制备的薄膜的禁带宽度位于1.21～1.24 eV的范围.

CuIn1-xGaxSe2（CIGS） is a promising direct band-gap semiconductor material for developing a new generation of high-efficiency and low-cost thin film solar cells due to its variable band-gap structure and high absorption coefficient in visible range.In this paper,a series of CIGS thin films were fabricated by combination of DC sputtering and selenizing processes.The effects of the sputtering power for deposition of CuIn1-xGax（CIG） metal precursors and substrates on the microstructures and optical properties of the CIGS films were investigated.It was found that the film,deposited at 50W sputtering power onto Mo-coated soda lime glass（SLG） substrate and then selenized at 550℃ for 40minutes,exhibited a single chalcopyrite phase,uniform and dense morphology,and columnar grains.It is also found that the optical band gaps of the films are in the range of 1.21～1.24eV.