一种新型Class AB开关电流存储单元的设计

Design of a Novel Class AB Switched Current Memory Cell

设计了一种新型高性能Class AB开关电流(SI)第一代存储单元电路。电路由对称的电压反转跟随器(FVF)连接Class AB SI存储单元组成,输入级采用电流传输器结构,输出级采用可调共源共栅结构,电路具有误差小、功耗低、性能高等特点。基于此存储单元,设计了延时器和双线性积分器进行验证。电路采用SMIC 0.18μm工艺,在Spectre中进行仿真。结果表明,该存储单元具有较好的性能和应用价值。

A novel Class AB switched current（SI） first generation memory cell with high performance was proposed.In the new circuit,symmetrical flipped voltage follower（FVF） was connected to Class AB SI memory cell,current conveyor architecture was used for input stage,and cascode architecture was adopted for output stage.The circuit featured low power,small error and high performance.Based on the proposed memory cell,a delay cell and a bilinear integrator were designed for verification.Spectre simulation based on SMIC 0.18 μm process indicated that the memory cell had excellent performance.