摘要
利用电荷泵自举原理,提出一种新颖的CMOS驱动电路。该电路在输入信号未进行开关操作时对电容充电,在开关操作发生时,由电荷泵电容和电源一起向负载电容充放电,从而可在不影响充放电时间的前提下降低电源对负载电容的充放电尖峰电流,减小电源噪声。该电路特别适合用来驱动采用高k介质或深槽隔离工艺的功率集成电路,可同时降低上升/下降沿时间和电源尖峰电流,并大幅减小芯片面积。采用中芯国际0.35μm标准CMOS工艺进行流片,测试结果表明,该电路可同时降低负载电容充放电尖峰电流与上升/下降沿时间。
A novel CMOS driver was proposed based on charge pump.In this circuit,the charge pump capacitor was charged while the switch was idle,and discharged to the load capacitor,together with power supply,while the switch was operating,thereby reducing both peak current of the load capacitor and noise from power supply.The circuit,which could cut down both switching time and peak current from supply power and reduce die area significantly,is especially suitable for power IC with high k dielectric or RIE trench isolation.The device was implemented with SMIC's 0.35 μm standard CMOS process.Test results indicated that both smaller peak current during load capacitor charging/discharging and less switching time were achieved for the driver.
出处
《微电子学》
CAS
CSCD
北大核心
2011年第3期401-406,共6页
Microelectronics
关键词
功率管驱动
电荷泵
高k介质
深槽隔离
缓冲器
Power MOSFET driver
Charge pump
High k dielectric
Trench isolation
Buffer