复合多晶硅栅LDD MOSFET制造工艺研究

Investigation into Double Doping Polysilicon-Gate LDD MOSFET Process

通过工艺模拟软件TSUPREM,设计了一种复合多晶硅栅(DDPG-MOS FET)的制造工艺,并使用MEDICI软件对采用该工艺的器件的频率特性和瞬态特性进行分析。结果表明,DDPG-MOS制造工艺简单、完全与CMOS工艺兼容,其结构明显改善了传统MOSFET的多项性能,在射频领域具有很好的应用前景。

Manufacturing process for DDPG-MOS device was designed using process simulation software TSUPREM.Frequency and transient characteristics of the device fabricated with the process were analyzed using MEDICI.Results showed that the proposed DDPG-MOS process was simple and completely compatible with CMOS process,and some of the performances of the device with the new structure were significantly improved,compared to traditional MOSFET.The device can find applications in RF field.