摘要
随着超大规模集成电路向高集成、高可靠性及低成本的方向发展,对IC工艺中的全局平坦化提出了更高的要求。在特大规模集成电路(GLSI)多层布线化学机械抛光(CMP)过程中,抛光质量对器件的性能有明显影响。研究了多层互连钨插塞材料CMP过程中表面质量的影响因素及控制技术,分析了抛光过程中影响抛光质量的主要因素,确定了获得较高去除速率和较低表面粗糙度的抛光液配比及抛光工艺参数。
With the development of GLSI towards high integration density,high reliability and low cost,higher quality for global planarization in IC process are required.During chemical mechanical polishing（CMP） in multilevel metallization for GLSI,the quality of polishing has remarkable effect on performances of the device.In this work,key factors affecting surface quality of tungsten plug for multilevel interconnect during CMP process were investigated and analyzed,as well as its controlling technology.Optimal recipe for slurry and optimized polishing parameters to achieve higher removal rate and lower surface roughness were defined.
出处
《微电子学》
CAS
CSCD
北大核心
2011年第3期447-450,469,共5页
Microelectronics
基金
02国家重大专项(2009ZX02308)
国家自然科学基金联合基金资助项目(NSAF10676008)
教育部博士基金资助项目(20050080007)
