SOI LIGBT抗闩锁效应的研究与进展

Progress in Research of Anti-Latch-Up Effect of SOI LIGBT

概述了绝缘层上硅横向绝缘栅双极晶体管(SOI LIGBT)抗闩锁结构的改进历程,介绍了从早期改进的p阱深p+欧姆接触SOI LIGBT结构到后来的中间阴极SOI LIGBT、埋栅SOILIGBT、双沟道SOI LIGBT、槽栅阳极短路射频SOI LIGBT等改进结构;阐述了一些结构在抗闩锁方面的改善情况,总结指出抑制闩锁效应发生的根本出发点是通过降低p基区电阻的阻值或减小流过p基区电阻的电流来削弱或者切断寄生双极晶体管之间的正反馈耦合。

Research of anti-latch-up structure of SOI LIGBT and its improvement from deep p＋ sinker SOI LIGBT to vertical gate RF SOI LIGBT with a shorted-anode were described in general.Some improved anti-latch-up structure of SOI LIGBT were presented in detail,including buried gate SOI LIGBT,dual-gate SOI LIGBT and vertical gate RF SOI LIGBT with a shorted-anode.Finally,it was pointed out that the basic method to restrain latch-up effect is to alleviate or remove positive feedback coupling between parasitic bipolar transistors by reducing p-base resistance or decreasing current flowing through p-base resistor.