摘要
由Ⅲ-V族半导体材料InAs/GaSb或InAs/Ga1-xInxSb构成的Ⅱ类超晶格(T2SL)光电探测器近年来在理论结构设计及试验器件实现方面进展显著。带隙工程和能带结构工程使得T2SL比碲镉汞材料具有某些优势,特别是很小的窄带隙方面。这些特有的性质,例如较大的有效电子质量、重空穴带和轻空穴带之间的较大间距可以抑制俄歇复合,使其成为一种很有吸收力的甚长波红外(VLWIR)探测器材料。通过归纳和分析近年来刊发的有关文献资料,介绍了T2SL/VLWIR探测器发展中的有关问题,例如基本概念、结构、性能优化、数值建模、电学性能等。
Type Ⅱ superlattce（T2SL） photodetectors,which is composed of Ⅲ-V semiconductor materials InAs/GaSb or InAs/Ga1-xInxSb,have experienced significant improvements in both theoretical structure design and experimental device realization in the past few years.The bandgap engineering and band structure engineer-ing provides T2SL with some advantages over mercury cadmium telluride materials,particularly for very narrow band gaps.These inherent properties,such as a higher effective electron mass and large separation of the heavy and light-hole bands to suppress Auger recombination,make them an attractive material for very long wavelength infrared（VLWIR） detectors.By summarizing and analyzing of related papers published in recent years,an over-view on issues in the development of T2SL/VLWIR detectors is provided,such as basic concepts,structure,per-formance optimization,numerical modeling,electronic properties and etc.
出处
《光电技术应用》
2011年第2期45-52,共8页
Electro-Optic Technology Application
关键词
Ⅱ类超晶格
红外探测器
甚长波红外
type Ⅱ superlatticesi
nfrared detectors
very long wavelength infrared（VLWIR）
