摘要
本文从理论上探讨了色散关系的作用,引进α_e和F因数,修正了半导体激光器的光谱线宽公式,发现通过波导结构的设计不但可减小α_e因数,还可增大F因数来进一步抑制光谱线宽,用所提出的等效反射率法分析了纵向耦合腔(C^3)的选模和压缩线宽的机制,指出实现单纵模窄线宽的条件。
The effect of the dispersive relation is investigated theoretically and a nominal linewidth broadening enhancement factor a, and an F factor related to the dispersive relation are introduced to modify the spectral linewidth formula of semiconductor lasers. It is found that the spectral linewidth not only can be suppressed by decreasing the linewidth broadening en-hancement factor, but also can be suppressed further by increasing the F factor. The mechanisms of the mode selection and linewidth compression in longitudinally coupled cavity (C3) are analyzed by means of the proposed effective reflectivity method, and the optimum condition for realizing single longitudinal mode with narrow linewidth is noted.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1990年第11期1739-1744,共6页
Acta Physica Sinica