相干光注入半导体激光器锁定过程的稳定性和到达混沌态的各种不稳定现象

STABILITY OF THE COHERENT LIGHT INJECTION LOCKING IN SEMICONDUCTOR LASERS,THE RELATED INSTA BILITY PHENOMENA AND THEIR ROUTES TO CHAOS

本文从半经典理论出发,导出半导体激光器相干光注入锁定过程的基本方程组,讨论了静态解的多支性及其稳定性,稳态调制特性及其稳定性,锁定区内外各种不稳定现象及其在光注入条件下参数平面上的分布,发现锁定区内不稳定区中部存在一混沌区,而在靠近稳定区下边界则存在一自脉动区,混沌区与自脉动区之间是其过渡区;发现到达混沌态可通过自脉动分岔(2~p型和非2~p型)、拍频自调制,以及其混合型等新的路径。

The fundamental equations describing the coherent light injection locking in semiconductor lasers are derived from semi-classical theory, the multi-branch structure and its stability, the steady modulation characteristic and its stability, several kinds of instability phenomena inside and outside the locking region and their distribution in the parametric plane representing the light injection condition are investigated. It is found that the stability region can only exist near the lower boundary and the right side in the locking region of the highest branch, and a self-pulsation region exists near to it. In the central portion in the rest part of the locking region there exists a chaotic region, between self-pulsation and chaotic regions is the transition region. In this transition region and outside the locking region there are bifurcation of self pulsation of 2 p type and non-2 p type, beat frequency self-modulation, and their mixed forms, the intermitant relaxation oscilation and intermiting chaos, etc., and several new routes to chaos.