B掺杂a-SiC:H/本征a-Si:H异质结中的B扩散

BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS

本文用~11B(p,a)~8Be(E_r=163keV)核反应分析方法,研究不同生长温度和退火温度对a-SiC:H(B)/a-Si:H异质结构中B原子浓度剖面分布的影响,由B原子浓度剖面分布的变化,分别估算了B在a-Si:H生长和退火过程中的扩散系数,结合电导率随膜厚度变化的测量,并依据最新提出的热平衡缺陷观点,对B的扩散过程作了分析。

The B depth profiles in B-doped a-SiC: H/undoped a-S1: H heteroiunctions have been measured by utilizing the nuclear reaction 11B(p, α)8Be. From the change of B depth profiles, we estimate the coefficients of B diffusion in a-Si:H during preparation and post-deposition annealing. The behaviors of electrically activated B diffusion have also been investigated by conductivity measurements. Based on the recent studies of thermal equilibrium defects in a-Si: H, a simple discussion on the mechanism of B diffusion in a-Si:H is presented in this paper as well.