离子注入结合热退火方法制备ZnO薄膜及其表征

Fabrication and Characterization of the Zno Film Fabricated by Zinc-Implanted Silica and Subsequent Annealing

采用离子注入技术,将Zn离子注入到非晶SiO2中.注入后样品在氧气氛围下分别经600℃、700℃、800℃退火.用光学吸收谱、扫描电子显微镜(SEM)、透射电子显微镜(TEM)对注入样品以及退火的样品进行分析.实验结果表明:经700℃退火后,注入形成的Zn粒子迁移到衬底表面并形成ZnO薄膜.由该方法制备的ZnO薄膜实用于器件研制,具有很好的应用前景.

Zinc oxide films are fabricated on the surface of silica by implantation of Zn ions and following thermal oxidation.Optical absorption spectra,SEM,TEM studies show that,with the increase of annealing temperature to 700 ℃,Zn nanoclusters were diffused to the surface of silica substrate,where they were oxidized to ZnO and the film was formed.This method for fabricating ZnO film has good potential applications in lighting-emitting devices.