摘要
采用TEM 研究了SiC/AlSi 复合材料, 提出了“界面Si”的概念。由于与增强体SiC 不润湿, 初生α(Al) 相不在SiC 颗粒上形核并对其发生排斥。(Al+ Si) 共晶体中的共晶领先相Si 优先在SiC表面上形核、长大, 形成界面Si, 并形成大量SiC/Si 界面。SiC/Si 界面“干净”、平直, 结合紧密, 其中未发现任何界面相。在个别SiC/Al 界面上析出了二次Si。
SiC p/Al Si composites were studied by means of conventional TEM. The conception of “interfacial Si” was proposed. Because of the nonwetting between liquid metal and reinforcing particles, primary α phase rejects SiC particles and does not nucleate on them. It was discovered that the leading phase Si in the (Al+Si) eutectic tends to nucleate and grows preferentially at the SiC surface, thus forming the characteristic “interfacial Si”, and the SiC/Si interfaces. The SiC/Si interfaces are found to be smooth, clean and closely bonded; no voids, reaction layers or other interfacial phases are found at the interfaces except the “interfacial Si”. Beside the large side eutectic Si, tiny Si particles were also found precipitate in some SiC/Al interfaces, forming the “secondary Si precipitates”.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
1999年第A01期20-24,共5页
The Chinese Journal of Nonferrous Metals
基金
广东省自然科学基金
关键词
复合材料
二次析出
界面硅
碳化硅
铝硅合金
SiC p/Al Si composites interfacial Si SiC/Si interface secondary Si