PECVD法TiSi_2薄膜的制备工艺研究

A technological study of TiSi_2 thin film formed by PECVD

本文利用PECVD低温淀积台进行TiSi_2薄膜的制备。采用X射线衍射、俄歇分析和扫描电镜等分析手段,对所制备的TiSi_2薄膜及其氧化特性、多层膜结构和刻蚀特性进行了全面的测试分析,证明采用PECVD方法制备TiSi_2薄膜的工艺是完全可行的。

TiSi_2 thin film has been formed by PECVD low-temperature deposition equipment. By means of X-Ray diffraction, Auger analysis and SEM, TiSi_2 thin film and its oxidation characteristics, and multi-layer and etching characteristics have been fully measured. Re- sults show that the technology of the formation of TiSi_2 thin film by PECVD is possible.