电子束反应蒸发制备高迁移率IMO薄膜及其性能研究

Fabrication and characteristics of high-mobility transparent conducting IMO thin films via reactive electron beam vapor deposition

研究了掺杂剂含量对电子束反应蒸发技术生长掺钼氧化铟（In2O3：Mo,IMO）薄膜的微观结构以及光学和电学性能的影响。采用高纯度In2O3：MoO3陶瓷靶和O2作为源材料。随着MoO3掺杂剂含量的增加,IMO薄膜电阻率先降低而后增加,光学性能呈现薄膜透过率下降的趋势。在1.0 wt.%MoO3掺杂剂含量时,获得最佳薄膜性能,薄膜电阻率ρ约为1.97×10^-4Ω.cm,方块电阻Rs约为18Ω/□,载流子浓度n约为6.85×1020cm^-3,电子迁移率μ约为46.3 cm2.V^-1.s^-1,可见光和近红外区域透过率T约为75%-85%（含玻璃衬底）。这种高迁移率的IMO薄膜有望应用于μc-Si：H薄膜太阳电池以及a-Si：H/μc-Si：H硅叠层薄膜太阳电池。

The influence of MoO3 doping concentration on the microstructure,optical and electrical properties of In2O3：MoO3（IMO） thin films deposited by the reactive electron beam vapor technique is investigated in detail.High purity In2O3：MoO3 ceramic targets and oxygen gas are used as source materials.With the increase of MoO3 doping concentration,the resistivity of IMO thin films decreases until 1.0 wt.% but then increases from 2.0 wt.% to 10 wt.%,and the optical transmittance shows a downward tendency.Typical performance parameters of IMO thin films at 1.0 wt.% MoO3 doping concentration are：resistivity of ρ～1.97×10-4 Ω·cm,sheet resistance of Rs～18 Ω,concentration of n～6.85×1020cm-3,electron mobility of μ～46.3 cm2·V-1·s-1,and transmittance in the visible and near infrared regions of T～75%-85%（including glass substrate）.The high mobility IMO thin films are promising TCO materials applied in μc-Si：H thin film solar cells and a-Si：H/μc-Si：H tandem solar cells.