轴向场宽束离子源研究

STUDY ON A AXIAL-FIELD BROAD-BEAM ION SOURCE

我们研制了用于薄膜工艺的宽束离子源.该源能提供20～3000cV,束流强度最大达100mA 的宽离子束,可根据不同工艺要求,产生均匀束、会聚束及球状发散束等不同束形,并按不同的引出束能量,采用三栅、双栅或单栅引出系统.其最大气耗量为1.2Pa·m^3/s,放电室工作气压1.33×10^(-2)Pa(10^(-4)Torr 量级),可用 N_2、O_2、Ar 及 CH_4等工质工作.它已在离子束溅射镀膜、离子束直接淀积成膜及离子束辅助镀膜工艺得到了应用.证明其性能良好,稳定可靠.本文论述源的工作原理、结构、工作特性及多功能引出系统,并讨论了放电稳定性及薄膜工艺对离子源的要求.

An axial ficld broad-beam ion source is developed.A broad ion beam of 20～3000cV and maximum beam current of 100mA can be extracted by the sourcc.Three shapes of beams i.e.uniform,convergent and spherically-divergent beams.According to the various beam-extracted energy,triple,double and sigle-grid are used for various extraction sys- tems,respectively.Its maximum gas-consumption is 1.2 Pa.m^3/s,and The operational pressure is 1.33×10^(-2)Pa in the discharge chamber.It can operate with a variety of gases, such as N_2,O_2,Ar and CH_4,etc.The source is applied to ion beam sputtering deposition, ion beam direct-deposition and ion boam-assisted deposition.It shows that its perform- ance,stability and reliability direct-deposition ars completely satisfied for the requirement of thin film technology.