摘要
MOSFET 金属氧化物半导体场效应晶体管跨导结构是全集成 MOSFET-C连续时间滤波器的基本电阻结构.本文根据导出的 MOSFET 伏安特性的傅里叶公式,提出了失配情况下 MOSFET 跨导结构非线性的谐波分析法,并给出了详细表格以供应用时参考.
MOSFET transconductances are the basic resistive structures of MOSFET-C contin-
uous-time,filters.In this paper,based on general MOSFET transconductive characteristics
derived in Fourier series form,an harmonic analytic method is proposed and used in ana-
lysing the nonlinearities of MOSFET transconductive structures,especially in mismatching
cases.Also,some detail analytic results are given in a table for practical use.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1990年第2期99-110,共12页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金资助课题
关键词
MOS
场效应晶体管
集成滤波器
MOS field effect transistor
integrated filter
non-linear integrated circuits
harmonic distortion