摘要
在不同氨分压比（0~30%）下,用射频磁控溅射法在玻璃和硅衬底上制备了N掺杂β-Ga2O3薄膜.研究了氨分压比和退火对薄膜光学和结构特性的影响.N掺杂β-Ga2O3薄膜的微结构、光学透过率、光学吸收和光学带隙随着氨分压比的增加发生了显著变化.观察到了绿光、蓝光和紫外发光带,并对每个发光带进行了讨论.
The N-doped β-Ga2O3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios（from 0% to 30%）.The influence of ammonia partial pressure ratio and annealing treatment on the optical and structural properties were studied.The microstructure,optical transmittance,optical absorption and optical energy gap of the N-doped β-Ga2O3 films were significantly changed with the increasing of ammonia partial pressure.The green,blue and ultraviolet emission bands were observed and discussed.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2011年第6期852-856,共5页
Acta Photonica Sinica
基金
The National Natural Science Foundation of China (No.10974077)
the Natural Science Foundation of Shandong Province(No.2009ZRB01702)
Project of Shandong Province Higher Educational Science and Technology Program(No.J10LA08)
