应用于GSM/EDGE零中频接收机的CMOS射频前端

A RF CMOS Zero-IF Receiver Front-end for GSM/EDGE

介绍了一个零中频接收机CMOS射频前端,适用于双带(900 MHz/1 800 MHz)GSM/EDGE系统。射频前端由两个独立的低噪声放大器和正交混频器组成,并且为了降低闪烁噪声采用了电流模式无源混频器。该电路采用0.13μm CMOS工艺流片,芯片面积为0.9 mm×1.0 mm。芯片测试结果表明:射频前端在900 MHz频带的噪声系数为2.9 dB,输入三阶交调点为-12.8 dBm,在1 800 MHz频带的噪声系数为3.2 dB,输入三阶交调点为-11.9 dBm。工作在1.2 V电源电压时,射频前端在900 MHz频带和1 800 MHz频带消耗的电流分别为16.3 mA和18.3 mA。

A RF CMOS zero-IF receiver front-end for dual-band （900 MHz/1800 MHz） GSM/EDGE applications is presented. The RF front-end comprises two separate LNAs and quadrature mixers. The current mode passive mixers are employed to lower the flicker noise. The RF front-end is manufactured in a 0. 13 μm CMOS process and occupies an active chip area of 0. 9 mm×1.0mm. The RF front-end achieves a NF of 2. 9 dB and 3.2 dB, IIP3 of -12. 8 dBm and -11.9 dBm for the low band （900 MHz） and the high band （1 800 MHz）, respectively. The front-end consumes 16.3 mA at 1.2 V for the low band and 2 mA more for the high band.