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激光制备类金刚石膜技术研究 被引量:3

Research of Diamond-like Carbon Film Deposited by Pulsed Laser
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摘要 现有技术制备的类金刚石(DLC)膜由于含氢、硬度低、内应力大、附着力差等特点,严重限制了其光学工程应用。激光法是近年发展的一种制备DLC膜的新方法,相比其他制备方法具有诸多优点。综合分析了激光制备DLC膜过程中,激光波长、脉宽、功率密度、衬底温度和偏压等因素对薄膜质量的影响规律。采用氧气氛辅助沉积、元素掺杂和双波长激光复合沉积等关键改进技术,实现了在Si、Ge等基底上激光制备DLC膜光学工程化应用。 Diamond-like carbon (DLC) film in existence has characteristics, such as hydrogen-containing, low hardness, large inner-stress and bad adhesion. So it can not be used in optical engineering application. Pulsed laser deposition (PLD) is a new method developed in recent years. Compared to other deposition methods, it has many advantages. Influence of fac tors to DLC film in PLD process is analyzed synthetically. These factors mainly contain laser wavelength, pulse width, power density, temperature and voltage of substrate. Technics of oxygen ambient assistant-deposition, element doping and de- positing with two laser beams of different wavelength are adopted. DLC films have been deposited on Si and Ge substrates by PLD and realized optical engineering application. It is hopeful to achieve optical engineering application of DLC films by PLD.
出处 《光学与光电技术》 2011年第3期51-55,共5页 Optics & Optoelectronic Technology
基金 国家863计划(2009AA701××××) 国家安全重大基础研究项目(973计划)(613108020303)资助项目
关键词 类金刚石膜 激光沉积 氧气氛 掺杂 DLC film laser deposition oxygen ambient element doping
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  • 1郭延龙,王小兵,万强,卢常勇.超快脉冲激光沉积类金刚石膜的研究进展[J].激光与光电子学进展,2005,42(7):22-25. 被引量:10
  • 2宁永刚,孙晓泉.二氧化钒薄膜在激光防护上的应用研究[J].红外与激光工程,2005,34(5):530-534. 被引量:29
  • 3MORIN F J.Oxide which show a metal-insulator transition at the Neel Temperature[J].Phys Review Letter,1959,13 (1):34-36.
  • 4ROZGONYI G A,HENSLER D H.Structure and electrical properties of vanadium dioxide thin films[J].Vac.Sci. Technol.1968,5(6):194-199.
  • 5JEROMINEK H,PICARD F,VINCENT D.Vanadium oxide films for optical switching and detection[J].Opt. Eng.,1993,32(9):2092-2099.
  • 6QAZILBASH M M,BREHM M,CHAE B G,et al.Mott. transition in VO_2 revealed by infrared spectroscopy and nano-imaging[J].Science,2007(318):1750.
  • 7LYSENKO S,RUA A J,VIKHNIN V,et al.Light- induced ultrafast phase transitions in VO2 thin film[J]. Applied Surface Science,2006,252(15):5512-5515.
  • 8BECHER M F,BUCKMAN A B,WALSER R M,et al. Femtosecond laser excitation of the semiconductor metal phase transition in VO_2[J].Appl.Phys.Lett.,1994,65 (12):1507.
  • 9BOREK M,QIAN F,NAGABUSHNAM V,et al.Pulsedlaser deposition of oriented VO2 thin films on R-cut sapphire substrates[J].Appl.Phys.Lett,1993,3(32):88- 90.
  • 10KIM D H,KWOK H S.Pulsed laser deposition of VO2 thin films[J].Appl.Phys.Lett,1994,5(31):88-90.

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