共漏极双功率MOSFET封装研究

Study on Packaging Technology of Common Drain Dural Power MOSFET

针对适用于锂电池保护电路特点要求的共漏极功率MOSFET的封装结构进行了研发和展望。从传统的TSSOP-8发展到替代改进型SOT-26,一直到芯片级尺寸的微型封装外形,其封装效率越来越高,接近100%。同时,在微互连和封装结构的改进方面,逐渐向短引线或焊球无引线、平坦式引脚、超薄型封装和漏极焊盘散热片暴露的方向发展,增强了封装的电性能和热性能。

Packaging technology of common drain dural power MOSFET applied in Li-battery protecting circuit was studied.From traditional TSSOP-8 package,modified SOT-26 package,to chip-scale package,packaging efficiency is raised and even close to 100%.Meanwhile,electrical and thermal performance of the package have been obviously improved with the development of new packaging structure design,shortened bonding wire or flip-chip ball bonding,flat leads,ultra-thin package and exposed drain thermal pad.