摘要
采用有机电荷转移复合物和共轭Schiff碱作为存储介质,通过STM脉冲电压存储实验实现了存储密度大于1012bits/cm2的超高密度信息存储用UV-Vis、X射线四四衍射分析等方法对材料结构进行了表征,并用量子化学计算讨论了可能的存储机制.
Thin films of m-NBMN/P-DAB complex and N-(3-nitrobenzylidene)-P-phenylenediamine (NBPDA) were used as storage media by scanning tunneling microscope (STM) technique.Data marks of 1-2urn in diameter were written by applying voltage pulses between the STM tip and the substrate, which corresponded to a data storage density of over ID'bits/cm'. DFT quantum chemical calculation was carried out to discuss the possible mechanism of the recording process.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
1999年第6期576-580,共5页
Chinese Journal of Materials Research