脉冲激光法外延生长锰氧化物薄膜

EPITAXIAL GROWTH OF THE MANGANESE OXIDE THIN FILMS PREPARED BY PULSED LASER DEPOSITION

利用脉冲激光法在LaAlO3衬底上外延生长了La－Ca－Mn—O、La－Sr－Mn－O等巨磁电阻薄膜.测定了这些薄膜的电阻—温度特性，观测到了其铁磁转变及巨磁电阻效应实验发现，较高的淀积温度使薄膜的峰值转变温度Tp降低、峰值电阻率增大。

Epitaxial growth of colossal magnetoresistive thin films of manganese oxides of La1-xSrxMnO3, La1-xCaxMnO3 and Pr1-xSrxMnO3 have been achieved on LaAlO3 single crystal substrates by pulsed laser deposition. The temperature dependence of resistivity of the films was measured and the negative magnetoresistive effects have been observed. Studies indicated that deposition at higher temperature decreased the transition peak temperature Ti of the films and simultaneously increased the maximum resistivity value. Annealing at higher temperature. however, produced an op posite effect on the resistivity behavior of these films. The mechanisms and the factors that influence the growth behaviors and the properties of the films were analyzed tentatively.