硫化铟常压硫酸浸出动力学研究

Study on Sulfuric Acid Leaching Kinetics of Indium Sulfide at Normal Pressure

用人工合成的硫化铟模拟实际硫化铟,通过测定不同物料粒度、不同反应温度、不同硫酸浓度和不同浸出时间下铟的浸出率,进行了硫化铟常压硫酸浸出的动力学研究。结果表明:硫化铟常压硫酸浸出过程符合晶粒参数n为0.576的Avrami模型,受化学反应和扩散混合控制;由于化学反应较快,因此要提高铟的浸出效率,应设法强化扩散效应。

Taking the synthetic indium sulfide to simulate the actual one,the sulfuric acid leaching kinetics of indium sulfide at normal pressure were investigated by surveying the leaching rate of indium in different particle size,reaction temperature,acidity and different leaching time.The results indicated that the leaching process fit for Avrami equation as grain parameter was 0.576.It was jointly controlled by the diffusion and reaction of chemistry.Since the reaction of chemistry is fast,the diffusion reaction should be intensified to improve the leaching rate of indium.