摘要
采用GaAs p-i-n二极管单片集成工艺技术研制出C波段限幅开关集成芯片,该芯片集成了微波限幅器和单刀单掷(SPST)开关功能,尺寸仅为2.5 mm×1.0 mm。采用偏置相关S参数测试法建立可定标的p-i-n二极管器件模型,精准的器件模型保证集成芯片一次流片成功。实测结果显示,该芯片在5~6 GHz频率范围内插入损耗小于1 dB,隔离度大于50 dB,电压驻波比小于1.5∶1,开关速度小于25 ns,可承受10 W以上的连续波功率。该集成芯片在T/R组件接收通道可替代两只单一功能芯片,有较好的应用前景。
A C-band limiting-switch integrated chip was developed by GaAs p-i-n the diode monolithically integrated circuits(MMIC) process.The chip has the function of the limiter and single-pole single-throw(SPST) switch with the overall dimension of 2.5 mm×1.0 mm.The accurate scalable model of the diode extracted by bias dependent S-parameter guarantees the first pass success of the integrated chip.The measurement result shows that the insertion loss is lower than 1 dB and the isolation is better than 50 dB at 5-6 GHz,the voltage standing wave ratio(VSWR) is less than 1.5∶1,the switch speed is faster than 25 ns,and the continuous wave power handling is more than 10 W.The integrated chip can replace two single function chips for the receive channel of T/R modules,which makes it have promising application.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第7期542-544,561,共4页
Semiconductor Technology