期刊文献+

C波段限幅开关集成芯片 被引量:2

C-Band Limiting-Switch Integrated Chip
下载PDF
导出
摘要 采用GaAs p-i-n二极管单片集成工艺技术研制出C波段限幅开关集成芯片,该芯片集成了微波限幅器和单刀单掷(SPST)开关功能,尺寸仅为2.5 mm×1.0 mm。采用偏置相关S参数测试法建立可定标的p-i-n二极管器件模型,精准的器件模型保证集成芯片一次流片成功。实测结果显示,该芯片在5~6 GHz频率范围内插入损耗小于1 dB,隔离度大于50 dB,电压驻波比小于1.5∶1,开关速度小于25 ns,可承受10 W以上的连续波功率。该集成芯片在T/R组件接收通道可替代两只单一功能芯片,有较好的应用前景。 A C-band limiting-switch integrated chip was developed by GaAs p-i-n the diode monolithically integrated circuits(MMIC) process.The chip has the function of the limiter and single-pole single-throw(SPST) switch with the overall dimension of 2.5 mm×1.0 mm.The accurate scalable model of the diode extracted by bias dependent S-parameter guarantees the first pass success of the integrated chip.The measurement result shows that the insertion loss is lower than 1 dB and the isolation is better than 50 dB at 5-6 GHz,the voltage standing wave ratio(VSWR) is less than 1.5∶1,the switch speed is faster than 25 ns,and the continuous wave power handling is more than 10 W.The integrated chip can replace two single function chips for the receive channel of T/R modules,which makes it have promising application.
出处 《半导体技术》 CAS CSCD 北大核心 2011年第7期542-544,561,共4页 Semiconductor Technology
关键词 砷化镓 P-I-N二极管 限幅器 开关 集成芯片 GaAs p-i-n diode limiter switch integrated circuit
  • 相关文献

参考文献7

  • 1高葆新.微波集成电路[M].北京:国防工业出版社,1995.120-169.
  • 2王静辉,魏洪涛,张力江.GaAs垂直结构PIN二极管限幅器[J].半导体技术,2008,33(9):766-768. 被引量:7
  • 3SEYMOUR D J, HESTON D D, LEHMANN R E, et al. X-band monolithic GaAs p-i-n diode variable attenuation limiter [ C ] // Proceedings of IEEE MTT-S Digest. Dallas, TX , USA, 1990:841-844.
  • 4ZYCH D, BEALL J, SEYMOUR D,et al. A GaAs vertical p-i-n diode production process[ C]// Proceedings of GaAs IC Symposium Technical Digest. New Orleans USA,1990:241 -244.
  • 5SMITH D G, HESTON D D, ALLEN D L. Designing high-power limiter circuits with GaAs p-i-n diodes [ C ] jJ Proceedings of IEEE MTT-S Digest. Anaheim, CA , USA 1999:329 -332.
  • 6CARROLL J M. Performance comparison of single anddual stage MMIC limiters[ C ]//Proceedings of IEEE MTT- S Digest. Phoenix, AZ, 2001 : 1341 - 1344.
  • 7LEE J L, ZYCH D, REESE E, etal. Monolithic 2 - 18 GHz low loss, on-chip biased p-i-n diode switches [ J]. IEEE Transactions on Microwave Theory and Techniques, 1995, 43(2): 250-256.

二级参考文献5

  • 1SEYMOUR D J,HESTON D D,LEHMANN R E,et al.X-band monolithic GaAs PIN diode variable attenuation limiter [ J ]. IEEE MTT-S Digest, Vol 2.1990 : 841-844.
  • 2TAKASU H, SASAKI F, KAWANO M, et al. Ka-band low loss and high power handling GaAs PIN diode MMIC phase shifter for reflected-type phased array systems [J]. IEEE MTT-S Int Microwave Syrup Digest, Vol 2.1999:467-470.
  • 3LIAO C I, SZE P W, HOUNG M P, et al. Very high selective etching of GaAs/Al0.2 Ga0.8 As for gate recess process to pseudomorphic high electron mobility transistors (PHEMT) application using citric buffer solution [ J ]. JJAP, 2004, 43 (6B) :800-803.
  • 4VOLKOV V, IVANOVA V, KUZ' MICHEV Y, et al. Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range [ J]. Technical Physics Letters, 2005,31 (7) :611-612.
  • 5SMITH D G,HUSTON D D,ALLEN D L.Designing high-power limiter circuits with GaAs PIN diodes [ J ]. IEEE MTT-S International, 1999,1 ( 1 ) : 329-332.

共引文献32

同被引文献11

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部