光刻胶光学性质的光谱椭偏测量方法研究

Study on Measuring Method of Optical Characteristics of Photoresist by Spectroscopic I-Ilipsometry

利用相调制型光谱椭偏仪研究了光刻胶光学常数的测量方法，针对测量过程中光刻胶曝光控制优化了测量方案和仪器参数。对常见的$9912正型光刻胶，给出了曝光前后275～650nm波段的光学常数。并采用动态椭偏法测量了所需波长下曝光前的光学常数。实验结果表明：该测量方法适用于光刻胶在紫外一可见．红外宽波段的光学性质研究，在光刻模拟、新型光刻胶材料研制及其光学性质表征等领域有重要实用价值。

By means of phase-modulated ellipsometer, the method for measuring optical constants of photoresist is described. The test scheme and instrument parameters for testing process of photoresist are optimized. For commonly used positive $9912 photoresist, the optical constants for 275 -650 nm before/after the exposure are measured, and the dynamic ellipsometry is used to obtain the values before the exposure at wavelengths of interest. The experimental results indicate：the method provided is applicable for the research of photoresist in UV-VIS-NIR spectral range and may find important application in the optical lithography simulation, the development and characterization of new-type pholoresist materials.