一种格栅状上电极的CMOS工艺聚酰亚胺电容型湿度传感器(英文)

A Capacitive Polyimide Humidity Sensor with Grid-Type Upper Electrode by CMOS Process

报道了采用标准CMOS工艺制作的格栅型上电极的电容型湿度传感器,采用高分子材料聚酰亚胺作为感湿介质,铝作为金属电极。对该湿度传感器的器件结构、制作工艺和传感器特性,如灵敏度、湿滞以及响应时间等进行了讨论。测试结果表明,在12%-92%的湿度范围内,电容-相对湿度曲线具有良好的线性度,灵敏度为0.9 pF/RH,响应时间为5.5 s。

A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported.The humidity sensor uses polyimide thin film as humidity-sensitive layer,and aluminum as upper electrode and lower electrode.Details of device structure,fabrication process and sensor characteristics such as sensitivity,hysteresis,and response time are discussed.Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%,the sensitivity is 0.9 pF/RH,and the response time is about 5.5 s.