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金属/硅基纳米复合体系制备技术

Preparative Technique on Metal-silicon Nanocomposites
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摘要 金属/硅基纳米复合材料作为一种新型材料,获得了比相应单纯的纳米硅更为优越的材料性能.为更好地发挥这些材料的性能,需要解决材料表面的形貌(尺寸和形状)、效率及反应条件的可控制性.为此,针对金属/硅基复合纳米体系的制备技术及进展作了概述. Metal-silicon nanocomposites have more superior properties than that of traditional nanosilicon as a new material.For developing the properties of these materials,it was needed to control the surface's feature of the materials(both shape and size),efficiency and reaction conditions.So the preparative technique and its development of metal-silicon nanocomposites were summarized.
作者 吕健 杨晓辉
出处 《华北水利水电学院学报》 2011年第3期148-150,共3页 North China Institute of Water Conservancy and Hydroelectric Power
基金 河南省重点科技攻关项目(072102340009) 河南省教育厅自然科学基础研究计划项目(2009A110011)
关键词 纳米硅 金属/硅基纳米复合材料 制备技术 nanosilicon metal-silicon nanocomposites preparative technique
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参考文献14

  • 1Hossain S M,Chakraborty S, Dutta S K,et al. Metal pattern- ing for large area electroluminescent porous silicon [ J]. Mi- croelectronic Engineering,2001,56 ( 3 ) : 303 - 310.
  • 2Ye W, Shen C, Tian J, et at. Self-assembled synthesis of SERS-active silver dendrites and photoluminescence prop- erties of a thin porous silicon layer [ J ]. Electrochemsity Communications ,2008,10:625 - 629.
  • 3Peng Kui qing,Zhu Jing. Simultaneous gold deposition and formation of silicon nanowire arrays [ J ]. J Electroanal Chem ,2003,558:35 - 39.
  • 4Wang Sheng-yue, Wang Wei. Characterization and gas- sensing properties of nanocrystalline iron (Ⅲ) oxide films prepared by ultrasonic spray pyrolysis on silicon [ J ]. Sen- sors and Actuators B ,2000,69( 1 ) :22 -27.
  • 5Jeske M,Schultze J W. Electrodiposition of metals into por- ous silicon[ J]. Thin Solid Films, 1995,255 ( 1 ) :63 - 66.
  • 6Robert A W, Dryfe Dr, Erich C Waher, et al. Electrodeposi- tion of metal nanostructures by galvanic displacement pow- ered with insoluble crystals of a ferrocene derivative [ J ]. Chem Phys Chem ,2004,5 ( 12 ) : 1879 - 1884.
  • 7Ghosh S, Hong Kwangpyo, Lee Chongmu. Structural and physical properties of thin copper films deposited on porous silicon[ J 1. Materials Science and Engineering B, 2002,96 (1) :53 -59.
  • 8Ansari Z A, Hong Kwangpyo, Lee Chongmu. Structural and electrical properties of porous silicon with rf-sputtered Cu films[ J ]. Materials Science and Engineering B, 2002,90 (1) :103 - 109.
  • 9Aw K C, Ibrahim K. Characterisation of metal oxide semi- conductor capacitor structure using low-k dielectric methyl- silsesquioxane with evaporated aluminium and copper gate [ J ]. Thin Solid Films ,2003,434 ( 2 ) : 178 - 182.
  • 10Brenner A, Riddell G E. Deposition of nickel and cobalt by chemical reduction[ J ]. Proc Am Electropl Soc, 1947, 34 : 156 - 170.

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