摘要
Vertical zinc blende GaAs/AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism.It was found that radial growth can be enhanced by increasing the growth temperature.The growth of radial heterostructure can be realized at temperature higher than 500℃,while the growth temperature of axial heterostructure is lower than 440℃.The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.
基金
supported by the National Basic Research Program of China(No.2010CB327600)
the Programme of Introducing Talent of Discipline to Universities of China(No.B07005)
the National High Technology R&D Program of China(2009AA03Z405, 2009AA03Z417)
New Century Excellent Talents in University(NCET-08-0736)
Chinese Universities Scientific Fund(BUPT2009RC0409,BUPT2009RC0410)
