MOPA结构1064 nm单模半导体激光器

1 064 nm Single Mode LD with MOPA Structure

1 064 nm单模半导体激光器在测试、通信、光纤激光器种子源等多种领域有着广泛的应用。设计并制作了一种MOPA结构1 064 nm单模半导体激光器。做为对比,同时制作了相同外延材料和腔长的脊波导单模半导体激光器。测试结果表明,该MOPA结构管芯发生灾变性光学损伤(COD)时的注入电流约740 mA,最高功率达到375 mW,无扭折最大输出功率为300 mW,此时注入电流约为610 mA,水平发散角为9.8°(FWHM),均优于作为对比的脊波导结构激光器。

1 064 nm single mode LDs can be widely applied in many fields,such as signal detection,communication and laser seed sources.In this paper,a 1064nm single mode LD with MOPA（Master Oscillator Power Amplifier） structure was designed.Meanwhile,for comparision,a ridge waveguide structure LD was fabricated with the same materials and cavity length.Test results indicate that the injection current is 740 mA when COD（Catastrophic Otical Damage） occurred for MOPA structure LD,the maximum power reaches 375 mW,the maximum injection current for kink-free output power（300 mW） is 610 mA,and the horizontal radiation angle is 9.8°.All these parameters are much better than those of ridge waveguide structure LD.