期刊文献+

LED静电损伤在老化过程中的变化趋势 被引量:4

Study on LED Reliability in the Aging Process
下载PDF
导出
摘要 针对发光二极管(LED)的可靠性问题,将抗静电测试与高温老化实验结合,将蓝绿色发光材料制成的二极管分组,测试其经过老化过程后的光色参数变化。实验数据表明,蓝绿色LED裸片与封装样品老化过程中的衰减趋势有一定差异,老化程度与封装材料和发光材料的搭配方式有关。对于未被静电损伤的芯片,经过老化过程后,并没有出现静电损伤被放大导致功能性失效的现象,静电对其参数衰减无明显影响,与单一的老化实验趋势相似。对于经过静电击打后出现异常,无法正常发光的芯片,高温老化实验产生了使其迅速损坏和复原的情况。 To study the reliability of LEDs,antistatic tests and experiments on high-temperature aging were performed.The LEDs fabricated with blue-green emitting materials were divided into different groups to study the variations of the LED photo-electricity parameters in the aging process.Experimental results show that the degrading trends of the LED barechips and the packaged chips are different,and the aging degree is related with both the packaging materials and the emitting materials.For the chips without the damage of static electricity,functional failure does not appear after the aging process,and the static electricity has little effect on the parameter attenuation,which is similar with the results of single aging experiment.For the chips who can not emit normally after static hitting,rapid damages and recoveries happened in the aging experiments.
出处 《半导体光电》 CAS CSCD 北大核心 2011年第3期339-342,共4页 Semiconductor Optoelectronics
关键词 LED 阿伦尼斯 ESD 可靠性 LED arrhenius ESD reliability
  • 相关文献

参考文献7

二级参考文献35

  • 1林亮,陈志忠,陈挺,童玉珍,秦志新,张国义.白光LED的加速老化特性[J].发光学报,2005,26(5):617-621. 被引量:41
  • 2余彬海,王浩.结温与热阻制约大功率LED发展[J].发光学报,2005,26(6):761-766. 被引量:71
  • 3林震,姜同敏,程永生,胡斌.阿伦尼斯模型研究[J].电子产品可靠性与环境试验,2005,23(6):12-14. 被引量:54
  • 4吕正.LED性能参数测量的现状与建议(下)[J].中国照明电器,2007(2):18-22. 被引量:1
  • 5HU J, YANG L, KIM L, et al. The ageing mechanism of high-power InGaN/GaN light-emitting diodes under electrical stresses[J].Semiconductor Science and Technology, 2007, 22 (12) : 1249-1252.
  • 6MANYAKHIN F, KOVALEV A, YUNOVICH A E. Aging mechanisms of InGaN/A1GaN/GaN light-emitting diodes operating at high currents [ J ]. MRS Intemet J of Nitride Semiconductor Research, 1998(3) :53-58.
  • 7MENEGHESSO G, LEVADA S, ZANONI E. Reliability of visible GaN LEDs in plastic package [J]. Micmelectmnics Reliability, 2003,43 ( 9 ) : 1737 - 1742.
  • 8MENEGHESSO G, LEVADA S, ZANONI E. Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels [ C ] //IEEE Int Sym on Reliability Physics, Phoenix Arizona, USA,2004 : 474-478.
  • 9陈宇彬,李炳乾,范广涵.白光LED中的荧光粉老化研究[J].佛山科学技术学院学报(自然科学版),2007,25(4):6-8. 被引量:7
  • 10Yu.L.Khait,J.Salzman,R.Beserman,Appl.Phys.Lett,53(22),28(1988).

共引文献98

同被引文献29

引证文献4

二级引证文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部