通过倒易空间扫描表征AlGaN外延材料

Characterization of AlGaN Epitaxial Materials by Reciprocal Space Mapping

AlGaN在紫外器件(紫外探测器、紫外LED等)以及高速功率器件(HEMT等)方面有着非常重要的应用。提出利用HRXRD倒易空间的测试分析方法来获得外延材料中的晶格应变及其缺陷状态,这对AlGaN材料的MOCVD外延生长具有重要的指导意义。

AlGaN is widely used in UV devices（UV detectors、UV LED）and high-speed power devices.The lattice strain and defects of the AlGaN epitaxial materials were chararaterized by HRXRD reciprocal space mapping（RSM）.Informations about the strain and defects are useful for MOCVD epitaxial growth of AlGaN materials.