摘要
用射频磁控溅射方法在不同基片温度下玻璃基片上分别制备NiO单层膜、NiFe单层膜和NiO/NiFe双层膜,研究了不同基片温度对膜的磁性能的影响.用振动样品磁强计(VSM)分析了膜的磁特性,结果表明:基片温度260℃时淀积的NiFe膜矫顽力Hc为184A·m-1,小于室温淀积NiFe膜的Hc(584A·m-1),且磁滞回线的矩形度更好.室温下淀积NiO(50nm)/NiFe(15nm)双层膜的Hc为4000A·m-1,交换耦会场(HEX)仅为1600A·m-1,磁滞回线的短形度很差,而260℃时淀积的双层膜的Hc下降到3120A·m-1,HEX却增大为4640A·m-1,同时磁滞回线的矩形度也得到改善,其截止温度TB高达230℃.X射线衍射(XRD)分析了膜的织构,结果表明:室温下淀积NiO膜呈现(220)织构,而260℃时淀积NiO膜呈现(111)织构;室温和260℃淀积的NiFe膜都呈(111)织构,但后者晶粒比前者大.
NiO films, NiFe films and double- layered NiO/NiFe films were prepared on glass substrates by rf magnetron sputtering. The temperature of substrates (TS) were varied from room temperature (TR) to 300℃. The HC of NiFe films deposited at TR was 584A·m-1, it became 184A·m-1 while the Ts increased to 260℃ and the squareness of hysteresis loop became better.The HC and HEX of NiO (50 nm)/ NiFe (15 nm) deposited at TR were 4000A·m-1 and 1600A·m-1,respectively. The HC decreased to 3120A·m-1 and HEX increased to 4640A·m-1 while the TS was 260℃. The squareness of hysteresis loop also became better and the blocking temperature (TB)was 230℃. XRD analysis indicated that the NiO films deposited at TR presented (220) texture whereas the films deposited at 260℃ showed (111) texture. The NiFe films deposited at TR and 260℃ both presented (111) texture, but the crystal particle size of the latter waJs larger.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第6期933-937,共5页
Journal of Inorganic Materials
基金
国家教委部门开放研究实验室资助!"上海交通大学薄膜与微细技术实验室"