摘要
在BT/Pt/Ti/SiO2/Si 衬底上用溶胶- 凝胶法制备了KTa0.55Nb0.45O3(KTN) 薄膜.0 .5 μm KTN- 0.08 μm BT 薄膜在25 ℃,1 .0 kHz 时,其εr= 1 114,tanδ=2 .5 % ;12 ℃时,其Pr= 2.1 μC/cm2 ,Ps=4 .2 μC/cm2, Ec= 5.8 kV/cm .0 .5 μm厚KTN膜的Curie 温度为35 ℃;25 ℃,1 .0 kHz 时,KTN 膜的εr= 1 412 . 估算KTN 材料的体积热容Cv = 2 .73 J/cm3·K.KTN 薄膜在室温及103 kV/cm 下极化30 min 后,其室温热释电系数p = 5 .1 ×10 -7 C/cm2·K,电压响应优值Fv = 1 .32 ×10 -10 C·cm/J,探测度优值Fd= 3.15 ×10 -10 C·cm/J,该薄膜是一种优异的热释电材料.
KTa 0.55 Nb 0.45 O 3(KTN) thin films were prepared by sol-gel method on BT/Pt/Ti/SiO 2/Si substrates. KTN film with a thickness of 0.5 μm and BT film with a thickness of 0.08 μm show a relative permittivity of 1 114 at room temperature and dielectric loss of 0.025 at 1.0 kHz. The remanent polarization is 2.1 μC/cm 2, spontaneous polarization is 4.2 μC/cm 2,coercive field is 5.8 kV/cm at 12 ℃. The maximum relative permittivity of 0.5 μm_thick KTN was observed at 35 ℃. Its relative permittivity at room temperature is calculated to be 1 412, volume heat capacity is 2.73 J/cm 3·K, pyroelectric coefficient at room temperature is 5.1×10 -7 C/cm 2·K,optimal value of voltage response is 1.32×10 -10 C·cm/J, optimal value of detectivity is 3.15×10 -8 C·cm/J. The results show that KTa 0.55 Nb 0.45 O 3 thin film is a kind of excellent pyroelectric material.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
1999年第6期677-684,共8页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金!资助项目
编号:59302015
关键词
钽铌酸钾
薄膜
热释电性能
介电
铁电
potassium tantalate niobate, thin film, sol-gel method, preparation, pyroelectric property