GaAs多晶薄膜的电共沉积制备及其半导体性能研究

STUDY ON ELECTRODEPOSITED POLYCRYSTALLINE GaAs FILMS AND THEIR CHARACTERISTICS

采用电共沉积制备ＧａＡｓ 薄膜． 研究了电流密度、溶液中离子浓度比、ｐＨ 值等电沉积参数对膜层质量的影响． 并在观察膜层形貌的基础上，测试了膜层化学成分、晶格结构和能级位置、带隙值等半导体性能． 测试结果证明膜的直接带隙材料性，带隙宽度为１．４０ ｅＶ，薄膜成分为Ｇａ０ ．９９４６Ａｓ１．００５４ ，接近化学计量的ＧａＡｓ．

The preparation of polycrystalline GaAs films by using electrodeposition technology is described. Influences of electrodeposition parameters, such as the current density, the relative concentration of ions, the value of pH of the electrolyte, on the quality of films are discussed. On the basis of observation of micrographs, the chemical composition, microstructure and parameters of the energy band of the films are measured. The results show that the composition of the films deposited is Ga 0.9946 As 1.0054 and the width of the band gap is 1.40 eV.