摘要
采用化学沉淀的方法在石英衬底上制备了短波红外纳米PbSe薄膜。XRD,SEM,TEM以及红外透射光谱测试分析结果表明,所制备的PbSe薄膜为纳米多晶薄膜,表面平整致密,薄膜的晶粒尺寸为10 nm左右,由于量子效应,薄膜吸收截止边相对PbSe体材料蓝移至1.6μm;经过敏化、光刻及金属化制备了PbSe单元光导探测器,在室温下进行光谱测试,其响应波段为0.6~1.5μm。
Lead selenide thin film for shortwave infrared detector is deposited on quartz glass substrate by chemical bath deposition.XRD,SEM,TEM and Fourier transform infrared spectroscopy are employed to characterize PbSe thin films.Experiments show that the film is polycrystalline nano structure,with grain size about 10 nm.Absorption edge of the film shifts to 1.6 μm due to quantum confinement effect.Proto-type PbSe photoconductive detector is fabricated.The responsive range is 0.6 to 1.5μm in spectral test under ambient temperature.
出处
《航空兵器》
2011年第3期17-19,27,共4页
Aero Weaponry
基金
航空科学基金资助项目(2007ZC12003)
关键词
硒化铅
化学浴沉淀
光导探测器
光谱响应
lead selenide
chemical bath deposition
photoconductive detector
spectral response
