摘要
用Ｋｅｉｔｈｌｅｙ Ｓ９００Ａ 型半导体自动参数测试仪测量了用ＭＯＣＶＤ方法生长的ＩｎＧａＰ／ＧａＡｓ异质结样品的界面ＣＶ的分布。用多项式逐段拟合的方法，转化得到界面浓度的分布，最后计算得到该体系的价带不连续性ΔＥｖ 为３１６ ｍ ｅＶ，约相当于０．６９
The C V profile of InGaP/GaAs heterojunction grown by MOCVD method has been measured by Keithley S900A semiconductor parametric test system. After transfering it to the hole interface concentration profile by polynomial sectional curve fitting method, we finally obtained the calculated valence band discontinuity Δ E v=316 meV, corresponding to about 0.69 Δ E g.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1999年第3期241-245,共5页
Research & Progress of SSE
基金
国家自然科学基金
关键词
铟镓磷
砷化镓
异质结界面
直接测量
半导体材料
InGaP/GaAs Heterojunction Interface Valence band Discontinuity Interface Fixed Charge Density C V Technique
