摘要
研究了电压控制振荡器(VCO)的相位噪声与构成该振荡器的有源器件的低频噪声的关系,测试了SiBJT、AlGaAs/GaAs HBT和GaInP/GaAs HBT的低频噪声,并分析了各自低频噪声产生的原因,提出了选择GaInP/GaAs HBT VCO来实现微波固体振荡器低相位噪声化这一发展方向。
We study the relations between phase noise in a voltage controlled oscillator(VCO) and low frequency noise in the active device of which the VCO is made,measure the low frequency noises in Si BJT,AlGaAs/GaAs HBT and GaInP/GaAs HBT respectively,and explain the reasons for existence of the low frequency noises.We conclude that GaInP/GaAs HBT VCO is a good choice to get lower phase noise in the microwave solid oscillator.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1999年第3期260-265,共6页
Research & Progress of SSE
关键词
电压控制振荡器
相位噪声
微波振荡器
HBT
Voltage controlled Oscillator (VCO) Phase Noise Low Frequency Noise GaInP/GaAs HBT