HBT电压控制振荡器的相位噪声

Phase Noise in the HBT Voltage controlled Oscillator

研究了电压控制振荡器（ＶＣＯ）的相位噪声与构成该振荡器的有源器件的低频噪声的关系，测试了ＳｉＢＪＴ、ＡｌＧａＡｓ／ＧａＡｓ ＨＢＴ和ＧａＩｎＰ／ＧａＡｓ ＨＢＴ的低频噪声，并分析了各自低频噪声产生的原因，提出了选择ＧａＩｎＰ／ＧａＡｓ ＨＢＴ ＶＣＯ来实现微波固体振荡器低相位噪声化这一发展方向。

We study the relations between phase noise in a voltage controlled oscillator(VCO) and low frequency noise in the active device of which the VCO is made,measure the low frequency noises in Si BJT,AlGaAs/GaAs HBT and GaInP/GaAs HBT respectively,and explain the reasons for existence of the low frequency noises.We conclude that GaInP/GaAs HBT VCO is a good choice to get lower phase noise in the microwave solid oscillator.