高场应力下FLOTOXMOS管的性能退化研究

Characteristics Degradation of FLOTOX MOS Transistor Under Cyclic Field

利用氧化层动态电流弛豫谱分析方法，测试分析了在周期性电场应力下ＦＬＯＴＯＸＭＯＳ管隧道氧化层中陷阱电荷的特性，为研究陷阱电荷对ＦＬＯＴＯＸ ＥＥＰＲＯＭ 阈值电压的影响提供了实验依据。在＋ １１ Ｖ、－ １１ Ｖ 周期性老化电压下所产生的氧化层陷阱电荷饱和密度分别为－ １．８×１０１１ ｃｍ － ２和－ １．４×１０１１ ｃｍ － ２，平均俘获截面分别为５．８×１０－ ２０ ｃｍ ２ 和７．２×１０－ ２０ ｃｍ ２，有效电荷中心距分别为３．８ ｎｍ 和４．３ ｎｍ ，界面陷阱电荷饱和密度分别为６．５４×１０９ ｃｍ － ２ｅＶ－ １和－ ３．８×１０９ ｃｍ － ２ｅＶ－ １，平均俘获截面分别为１．１２×１０－ １９ ｃｍ ２ 和４．９×１０－ １９ ｃｍ ２。

The characteristics of the charges in tunnel oxide of FLOTOX MOS transistor under cyclic field stress have been tested and analyzed by an oxide dynamic current relaxation spectroscopy methold, which provide an experimental basis for analyzing the influence of the trapped charges on the threshold voltage of the FLOTOX EEPROM. Under +11 V, -11 V cyclic field stress, the saturation oxide trapped charges density is 1.8×10 11 cm -2 and -1.4×10 11 cm -2 , respectively; the average generation/capture cross section of the oxide trapped charges is 5.8× 10 -20 cm 2 and 7.2×10 -20 cm 2 respectively; the centroid of the effective trapped charges is 3.8 nm and 4.3 nm respectively; the interface trapped charges is 6.54×10 9 cm -2 eV -1 and -3.8×10 9 cm -2 eV -1 respectively; the average generation/capture cross section is 1.12×10 -19 cm 2 and 4.9×10 -19 cm 2 respectively.