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深亚微米光刻技术 被引量:2

Deep Submicron Lithography Technology
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摘要 超大规模集成电路(VLSI)线宽的不断缩小,促进了光刻技术的发展和分辨率的提高,使分辨率已进入到深亚微米区域。光学光刻分辨率的提高是依靠缩短曝光波长、增大透镜系统的数值孔径(NA)、采用新技术改进掩模和光学系统的设计以及提高光致抗蚀剂的性能来实现的。在简要的介绍了VLSI发展趋势的基础上,论述了深紫外光刻(DUVL)、极紫外光刻(EUVL)和X射线光刻技术取得的重要成果及面临的问题和可能解决的途径。 The continued advancement of very large scale integrated circuits(VLSIs) in printing smaller and smaller device feature sizes forces lithography technologies to make a great progress in the resolution. As a result,the optical lithography has extended to the deep submicron region.Improvements in the optical resolution are achieved by increasing numerical aperture and decreasing wavelength concurrent with new techniques for improving masks and optical system design and enhancing resist performances. In this paper, a trend of the future development for VLSI is given briefly.Deep ultraviolet lithography(DUVL),extreme ultraviolet lithography(EUVL)and X ray lithography technologies are presented.The state of the art of the lithography and the problems to be solved are outlined. Key Words:Integrated Circuits DUVL EUVL X ray LithographyZ Tu Weifeng 1 Mao Haijun 2 Tu Weifeng 1 Mao Haijun 2 1 (Department of Anesthesiology, Nanjing General Hospital, Nanjing 210002) 2 (Nanjing College of Communication) Abstract To improve the work of emergency care and early cardio pulmonary brin resuscitation in our county, which is characteristic of abruptness and contingency, a new type of ventilator is highly required. It is hoped that such a ventilafor has a simple safe valve and does not need electric current from the mains. Also, the ventilator should be small in size, light in weight, simple in operation, easy to carry, swift to assembly, and reliable in ventilation. With the principle of pneumatic logic elements and the design of the integration of pneumatic circuits, we have successfully developed the Emergency Micro ventilator, which accords with the above requirements. It has been confirmed that the ventilator is very effectual and reliable in ventilation support for the patients(n=55) under general anesthesia without any case of hypoxemia,hypercapnia, hypotension, arrhythmia and so on, and the mechanical performances are stable.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 1999年第3期344-352,共9页 Research & Progress of SSE
关键词 VLSI 光刻 深亚微米光刻 分辨率 集成电路 Pneumatic logic element Pneumatic control and drive Ventilator Emergency
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参考文献3

  • 1王阳元,徐立,武国英,俞忠钰.ULSI相移光刻技术[J].电子学报,1993,21(2):77-83. 被引量:2
  • 2国家自然科学基金委员会,半导体科学与技术,1995年,58页
  • 3王煜(译),X射线光学在固体领域中的应用,1985年,40页

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