空间生长半绝缘GaAs单晶的器件研究

An Evaluation of the Space Grown SI GaAs by Device Property

试图从器件应用角度来评价空间生长半绝缘ＧａＡｓ单晶性能。为此我们选择了设计制备相对成熟、对材料性能要求的侧重面又不尽相同的器件和ＩＣ， 并选择了六个与材料关系密切的参数作为评价的标称参数。实验结果表明。

This paper tried to evaluate the material quality of the space grown SI GaAs single crystal from the point of device application.The devices and ICs with relatively mature design and fabrication and different requirements on the material features were chosen.Six parameters were taken for nominal parameters of evaluation.It was found that overall performance of SI GaAs single crystal grown in space was better than that grown in conventional LEC.