克尔透镜锁模固体激光器在半导体吸收中产生亚10fs脉冲理论研究

Theory of Sub-10fs Generation in Kerr-lens Model-locked Solid-state Lasers with Coherent Semiconductor Absorber

介绍了连续波克尔透镜锁模固体激光器在半导体饱和吸收体中产生超短脉冲的结果。在考虑吸收体-脉冲相干相互作用的理论框架里解释了超短脉冲的产生。根据耦合广义Landau-Ginzburg方程和Bloch方程对相干吸收体构造了解析模型。研究发现,当KLM不存在时半导体吸收体会产生非2π-双曲正割脉冲的自感应透明,KLM存在时则产生超短2π-双曲正割脉冲,KLM的出现会消除掉吸收体的最小调制度的限制。

The study results of ultra-short pulse generation in continuous-wave Kerr-lens mode-locked(KLM)solid-state lasers with semiconductor saturable absorbers are presented.The issues of extremely short pulse generation are addressed in the frames of theory that accounts for the coherent nature of absorber-pulse interaction.An analytical model is developed based on the coupled generalized Landau-Ginzburg laser equation and Bloch equations for a coherent absorber.The result shows that in the absence of KLM semiconductor absorber produces 2π-non-sech-pulses of self-induced transparency,KLM provides an extremely short sech-shaped pulse generation.The presence of KLM removes the limitation on the minimal modulation depth in absorber.