衬底温度对a-Si_(1-x)C_x:H薄膜成分的影响

The Impact of the Substrate Temperature on the Compositions of a-Si_(1-x)C_x:H

采用热壁低压化学气相沉积(LPCVD)技术,在Si(100)衬底上成功制备出了具有化学计量的氢化非晶碳化硅(a-Si1-xCx∶H)薄膜,并用傅里叶变换红外光谱仪和X射线光电子能谱仪对薄膜成分进行了分析,探讨了衬底温度对a-Si1-xCx∶H薄膜成分的影响,结果发现随着衬底温度升高,CH4分解效率得到提高,过量的C形成了C-C键.

Hydrogenated amorphous silicon carbide films（a-Si1-xCx∶H） have been successfully deposited on Si（100） surface with CH4 and SiH4 as reaction gases by the method of low pressure chemical vapor deposition（LPCVD）.Fourier transform infrared spectroscopy（FTIR） and X-ray photoelectron spectroscopy（XPS） are employed to analyze the impact of the substrate temperature on the compositions of as-deposited films.The results showed that the decomposition efficiency of CH4 was enhanced with a rise of the substrate temperature and the C—C bond was formed by the excessive carbide.